Colloquium 2007-09-27

 

3:30 p.m. in Room 307 of the Optical Sciences Meinel Building

Speaker:

Stephen Goodnick

Arizona State University

Title:

Simulation of Ultrafast Phenomenon in Semiconductor Nanostructures

 

Host:

Nasser Peyghambarian

 

Abstract:

In the present talk, we discuss the use of Ensemble Monte Carlo (EMC) techniques for the simulation of ultrafast phenomena in semiconductor nanostructures and devices.  EMC is essentially a direct solution of the semi-classical Boltzmann transport equation (BTE), which can be extended to account for various quantum mechanical and many body effects beyond the BTE framework.  We first discuss the application of this simulation method to carrier relaxation during ultrafast photoexcitation in GaAs quantum confined systems, in particular the role of intercarrier scattering and non-equilibrium phonons in intersubband relaxation. 

 

We then discuss the simulation of transport in GaN and AlGaN heterostructures using a full-band Cellular Monte Carlo simulator developed by our group [1].  The electronic band structure and phonon spectra are used as direct inputs to the simulator for both cubic, hexagonal, and strained crystal structures using both empirical and ab initio methods.  The full anisotropic electron-phonon interaction is calculated from the rigid-ion model using the electronic structure, the atomic pseudopotential, and the full phonon dispersion and eigenvectors for both acoustic and optical modes.  Good agreement is obtained between the simulated results, and experimental pulse I-V measurements of high field transport measured in-house [2].  The role of nonequilibrium hot phonons in limiting the frequency response of heterostructure field effect devices is also discussed.

 

Finally, we discuss the simulation of terahertz emission during ultrafast optical excitation in pin diode structure using the CMC code, and comparison to experimental studies by Leitensdorfer et al. [3].  Here good agreement is obtained between the experimentally observed temporal evolution of the terahertz pulse and the non-stationary dynamics of photoexcited electrons and holes at various DC field strengths.  For these simulations, and for high frequency and electro-optic devices in general, we have also coupled the CMC simulator with finite difference time domain (FDTD) solutions of Maxwell’s equations, and applied it to simulate terahertz pulse generation directly during electro-optic sampling.  

 

[1] M. Saraniti and S. M. Goodnick, IEEE Trans. Elec. Dev. 47 (2000) 1909.

[2] J. M. Barker et al., Physica B314 (2002) 39.

[3] A. Leitenstorfer, S. Hunsche, J. Shah, M.C. Nuss, and  W.H. Knox: Phys. Rev. Lett. 82 5140 (1999).