Scanning Electron Microscope (SEM) and Ion Mill

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ISI ABT WB-6 Scanning Electron Microscope

This 10kV Scanning Electron Microscope is very useful for analyzing and obtaining pictures of objects down into the sub-micron range. Samples must be gold-coated and the surface electrically grounded to allow the incoming electrons to return to ground. Sharp 3.5x4.5” black and white prints can be obtained from the sample with Polaroid SEM instant sheet film. Inside the chamber, the sample may be manipulated through 5 degrees of freedom to look at any spot on the sample in many orientations.

Support equipment:

Headway Research, Inc. Spin Coater

This spin coater holds small samples on a spindle via an external vacuum pump and is capable of spin rates up around 6000 rpm and can deposit photoresist from10s of nanometers to upwards of 50 microns

Pure Aire Clean hood

Non-turbulent laminar air flow maintains a clean environment in this clean hood to class 100 standards; perfect for working with clean samples for short periods of time.

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FAB104 Atomtech fast atom Ion Mill

This Ion mill utilizes a high voltage source to ionize low pressure gasses, accelerating and neutralizing them through an acceleration grid, creating a nearly neutral beam of atoms which bombard samples within the chamber and either deposit material or remove (etch) material via kinetic or chemical processes.

The following is the manufacturer's description of the FAB104 Atomtech fast atom,
from <http://www.atomtech.co.uk/FAB104.html>

The FAB104 series of sources are medium power saddle field fast atom sources which can be incorporated into arrays of up to five cells to suit coverage requirements.

Applications include substrate pre-cleaning for significantly enhanced film adhesion, sputter etching for production of diffraction gratings, semiconductor structures etc., atom beam sputter deposition, and FAB deposition of Diamond Like Carbon.

The atom source is compatible with gases such as Ar, Xe etc., in standard applications and CF4, SF6, C2F6, C3F8, CHF3, I2, etc., in applications such as selective milling of semiconductor materials and C2H2, C3H8, C4H10, etc., for the deposition of Diamond Like Carbon.


Fab 104 Source Data

Max. equivalent current output: (mA/cell) 10
Beam energy range (KeV) 0.65-2.1
Max. power input (W/cell) 500
Max. plasma current (mA/cell) 200
Applied high voltage range (Kv) 1-2.5
Typical Ar gas flow (sccm/cell) 15
Typical operating pressure (mbar) 1x 10-3
Pumping speed requirement (L/sec/cell) 500
Min. cooling water (L/min@20oC) 2