ALAN KOST – PUBLICATIONS                                                    November 2005

Journal Articles by Topic

PHOTONIC INTEGRATED CIRCUITS

“Broadband Arrayed Waveguide Gratings on InP,” Kameron Rausch, D. G. Geraghty, N. Eradat, N. Peyghambarian, and Alan R. Kost, accepted for publication in Opt. and Quantum Electron..

“Design and Fabrication of a Broadband Polarization and Temperature Insensitive Arrayed Waveguide Grating on InP,” Nasuhi Yurt, Kameron Rausch, Alan R. Kost, and Nasser Peyghambarian, Optics Express 13 (14), pp. 5535 - 5541 (2005).

“Magnetically Actuated Optical Phase Modulator,” Alan R. Kost, Lili Xiao, and Kameron Rausch, Optical Engineering 44 (8), 08502, pp. 1-2 (2005).

FIBER OPTICS

“Monte Carlo Analysis of Fiber Splice Loss,” Alan R. Kost, Katherine X. Liu, and Charles X. Qian, submitted to Optics Express.

“Analysis of Fiber Splice Loss Associated with Mechanical Tolerance,” Alan R. Kost, Katherine X. Liu, and Charles X. Qian, submitted to Optics Express.

“The Origin of Spectral Modal Noise in Fiber-Coupled Spectrographs,” Chia-Hung Chen, Robert O. Reynolds, and Alan R. Kost, accepted in Applied Optics.

“Fiber Bragg Grating Strain Sensor Array with Coherent Optical Frequency Domain Reflectometry,” Abdeq M. Abdi, Shigeru Suzuki, Axel Schulzgen, and Alan R. Kost, submitted to Journal of Smart Structures and Systems. (Invited Paper)

“Fiber Bragg Grating Array Calibration,” Abdeq M. Abdi, Shigeru Suzuki, Axel Schülzgen, and Alan R. Kost, in Sensors and Smart Structures Technologies for Civil, Mechanical, and Aerospace Systems, Masayoshi Tomizuka ed., Proc. of SPIE 5765, pp. 552-563 (2005).

“Infrastructure Optics,” Abdeq M. Abdi and Alan Kost, in Smart Structures and Materials 2004: Smart Sensor Technology and Measurement Systems, Eric Udd and Daniele Inaudi, eds., Proceedings of SPIE, 5384, pp. 218-228 (2004).

MODELOCKED FIBER LASERS

“Fabrication of Optically Nonlinear Semiconductor Mirrors for Modelocking of Neodymium-Doped Fiber Lasers,” Alan R. Kost, Monica L. Minden, and Hans W. Bruesselbach, IEEE J. Quantum Electron. 40 (8), pp. 1105-1112 (2004).

“A Range-Resolved Doppler Imaging Sensor Based on Fiber Lasers.” Monica L. Minden, Alan Kost, Hans W. Bruesselbach, Stanislav Ionov, Joseph Paranto, Dean Liskow, and Larry Humm, IEEE J. Select. Topics Quantum Electron. 3, pp. 1080-1086 (1997).

A pulsed fiber laser is the heart of a coherent LADAR system for automobile collision avoidance.  Molecular beam epitaxy was used to fabricate an optically nonlinear semiconductor mirror for laser modelocking.

OPTICAL SWITCHING AND OPTICAL PROPERTIES OF QUANTUM WELLS

 “Time-Resolved Photocarrier Decay for Mid-Infrared Semiconductors with Excitation Correlation.”

Alan R. Kost, Ulrich Pfeiffer, and Gottfried Döhler, Superlattices and Microstructures 37, pp. 373-379 (2005).

“Large Blue Shift of the Band Gap of GaAsSb/AlSb Quantum Wells with Ion Implantation.” Xiaolan Sun, Nasser Peyghambarian, Alan R. Kost, and Nayer Eradat, Appl. Phys. Lett. 86, 011905, pp. 1-3 (2005).

“Enhanced Photoluminescence from GaAsSb Quantum Wells.” Alan R. Kost, Xiaolan Sun, Nasser Peyghambarian, Nayer Eradat, Espen Selvig, Bjorn-Ove Fimland, and David H. Chow, Appl. Phys. Lett. 85 (23), pp. 5631-5633 (2004).

“High-Speed, Integrated Optoelectronic Modulation Circuit.” Daniel Yap, Kenneth R. Elliott, Young K. Brown, Alan R. Kost, and Elmira S. Ponti, IEEE Photon. Technol. Lett. 13, pp. 626-628 (2001).

“Integrated Optoelectronic Circuits with InP-Based HBT’s.” D. Yap, K. Brown, R. H. Walden, T. P. E. Broekaert, K. R. Elliot, M. W. Yung, D. L. Persechini, W. W. Ng, and Alan Kost, in Optoelectronic Integrated Circuits and Packaging V, Proceedings of SPIE Vol. 4290, pp. 1-11 (2001) (Invited Paper).

“Suppression of Intervalley Scattering in Ga(As)Sb Quantum Wells,” K. C. Hall, S. W. Leonard, H. M. Van Driel, A. R. Kost, and E. Selvig, Applied Physics Letters, Vol. 77, pp. 2882-2884 (2000).

“Subpicosecond Spin Relaxation in GaAsSb Multiple Quantum Wells”, K. C. Hall, S. W. Leonard, and H. M. van Driel, A. R. Kost, E. Selvig, and D. H. Chow, Applied Physics Letters, Vol. 75, pp. 4156-4158 (1999).  Errata

“All-Binary InAs/GaAs Optical Waveguide Phase Modulator at 1.06 µm.” T. C. Hasenberg, S. D. Koehler, D. Yap, A. Kost, and E. M. Garmire, IEEE Photon. Technol. Lett. 6, pp. 1210-1212 (1994).

“InAs/GaAs Short-Period Strained-Layer Superlattices Grown on GaAs as Quantum Confined Stark Effect Modulators.” Michael Jupina, Elsa Garmire, Tom C. Hasenberg, and Alan Kost, Appl. Phys. Lett.  60, pp. 686-688 (1992).

"Screening Effects in (111)B AlGaAs-InGaAs Single Quantum Well Heterostructures." T. S. Moise, L. J. Guido, R. C. Barker, J. O. White, and A. R. Kost." Appl. Phys. Lett. 60, pp. 2637-2639 (1992).

 “Direct Interferometric Measurement of the Quantum-Confined Stark Effect in InAs/GaAs Short Period Strained-Layer Superlattice MQWs” S. D. Koehler, E. M. Garmire, T. C. Hasenberg, and A. R. Kost, Electron. Lett. 27, pp. 2303-2304 (1991). 

“Band Edge Absorption Coefficients from Photoluminescence in Semiconductor Multiple Quantum Wells.”  A. Kost, H. C. Lee, Yao Zou, P. D. Dapkus, and E. Garmire, Appl. Phys. Lett. 54, pp. 1356-1358 (1989).

“Nonlinear Absorption Properties of AlGaAs/GaAs Multiple Quantum Wells Grown by Metalorganic Chemical Vapor Deposition.” Hsing-Chung Lee, A. Kost, M. Kawase, A. Hariz, P. Daniel Dapkus, and Elsa M. Garmire, IEEE J. Quantum Electron. QE-24, pp. 1581-1592 (1988).  (Invited Paper)

This paper reviews the first measurements of the nonlinear optical properties of semiconductor quantum wells grown by MOCVD.  The work was cited in the Decembe, 1987 issue of Optics News  as  “... one of the principal advances in the field over the past year”.

“Nonlinear Measurements in Multiple Quantum Wells of GaAs/AlGaAs Fabricated by MOCVD.” A. Kost, M. Kawase, E. Garmire, H. C. Lee, A. Danner, A. Hariz, and P. D. Dapkus, Optical Computing and Nonlinear Materials, proc. SPIE 881, pp. 122-128 (1988). (Invited Paper)

“Nonlinear Absorption in AlGaAs/GaAs Multiple Quantum Well Structures Grown by Metalorganic Chemical Vapor Deposition.” H. C. Lee, A. Hariz, P. D. Dapkus, A. Kost, M. Kawase, and E. Garmire, Appl. Phys. Lett. 50, pp. 1182-1184 (1987).

MID-INFRARED SEMICONDUCTOR LASERS

The work described in these papers received a Hughes Electronics award for "Innovation and Excellence in Laser Technology and Applications” and was featured in the September/October 1995 issue of Compound Semiconductors.

“Recent Advances in Sb-Based Midwave-Infrared Lasers.” T. C. Hasenberg, R. H. Miles, A. R. Kost, and  L. West, J. Quantum Electron. QE-33, pp. 1403-1406 (1997).

“3-5 µm Lasers Employing GaInSb/InAs Superlattice Active Layers.” A. R. Kost, L. West, R. H. Miles, and T. C. Hasenberg, In-Plane Semiconductor Lasers: from Ultraviolet to Midinfrared, proc. SPIE 3001, pp. 321-329 (1997).

 “GaInSb/InAs Superlattice-Based Infrared Lasers.” R.H. Miles, T.C. Hasenberg, A.R. Kost, and L. West, Quantum Well and Superlattice Physics VI, proc. SPIE 2694, pp. 2-7 (1996). (Invited Paper)

“Mid-wave Infrared Diode Lasers Based on GaInSb/InAs and InAs/AlSb Superlattices.” D. H. Chow, R. H. Miles, T. C. Hasenberg, A. R. Kost, Y.-H. Zhang, H. L. Dunlap, and L. West, Appl. Phys. Lett. 67, pp. 3700-3702 (1995).

 “3-4µm Laser Diodes based on GaInSb/InAs Superlattices.” R. H. Miles, D. H. Chow, T. C. Hasenberg, A. R. Kost, and Y-H Zhang, in Narrow Gap Semiconductors 95, Proc. of the 7th Intl. Conf. on Narrow Gap Semiconductors, pp. 31-35 (Institute of Physics Publishing, Bristol, 1995).

“Demonstration of 3.5 µm Ga1-xInxSb/InAs Superlattice Diode Laser.” T. C. Hasenberg, D. H. Chow, A. R. Kost, R. H. Miles, and Linda West, Electron. Lett. 31, pp. 275-276 (1995).

“Mid-Infrared Semiconductor Lasers with GaInSb/InAs Type-II Superlattices.” A. R. Kost, D. H. Chow, T. C. Hasenberg, R. H. Miles, and L. West, Laser Diodes and Applications, proc. SPIE 2382, pp. 271-276 (1995).

NONLINEAR OPTICAL PROPERTIES OF FULLERENES AND METALORGANICS

“Optical Limiting with Higher Fullerenes,” Alan R. Kost, John E. Jensen, R. O. Loufty and J. C. Withers, accepted for publication in Appl. Phys. B: Lasers and Optics 80, pp. 281-283 (2005).

“Fullerene-Based Large-Area Passive Broadband Laser Filters.” Alan Kost, J. E. Jensen, M. B. Klein, J. C. Withers, R. O. Loufty, M. B. Haeri, and M. E. Ehritz, Fullerenes and Photonics, proc. SPIE 2284,  pp. 208-219 (1994).

“Optical Limiting with C60 Solutions.” Alan Kost, John E. Jensen, Marvin B. Klein, and S. W. McCahon, Nonlinear Optical Materials for Switching and Limiting, proc. SPIE 2229, pp. 78-90 (1994).

“Picosecond Investigations of Optical Limiting Mechanisms in King’s Complex,” Thomas F. Boggess, Graham R. Allan, Steven J. Rychnovsky, D.R. Labergerie, Clark H. Venzke, Arthur L. Smirl, Lee W. Tutt, Alan R. Kost, Stephen W. McCahon, and Marvin B. Klein, Opt. Engin. 32, pp. 1063-1067 (1993).

“Optical Limiting with Carbon 60 in PMMA.” Alan Kost, Lee Tutt, Marvin B. Klein, T. Kirk Dougherty, and William E. Elias, Opt. Lett. 18, pp. 334-336 (1993).

 “Optical Limiting Performance of C60 and C70 solutions.” Lee W. Tutt and Alan Kost, Nature 356, pp. 225-226 (1992).

This was the first report of optical limiting with fullerenes. The work was featured in Science News, Chemical and Engineering News, and the Washington Post.  The paper was reprinted in Physics and Chemistry of Fullerenes, Edited by Peter W. Stephens, pp. 234-235, (World Scientific, Singapore, 1993). The paper has been cited 359 times.

“Picosecond Measurements of Optical Nonlinearities in King's Complex and Synthesized Analogues.” G. R. Allan, S. J. Rychvnosky, Arthur L. Smirl, Thomas F. Boggess, Lee Tutt, Alan Kost, and M. B. Klein, Nonlinear and Electro-Optic Materials for Optical Switching, proc. SPIE 1692, pp. 170-176 (1992).

SEMICONDUCTOR N-I-P-I MATERIALS

"n-i-p-i's” are semiconductors with layers alternatively doped n-type and p-type to give a periodic modulation of the energy bands.  n-i-p-i's can be tailored for enhanced diffusion, persistent photoconductivity, and large optical nonlinearity.

 “Wavelength Dependence of Combined Local and Carrier Transport Optical Nonlinearities in a Hetero n-i-p-i Structure,” Alan R. Kost, Michael H. Jupina, Thomas C. Hasenberg, and Elsa M. Garmire, accepted in Journal of Applied Physics.

“Nonlinear Optical Properties of a Hetero-nipi Structure with Coupled Quantum Wells,” Alan R. Kost, Ron R. Carter, Elsa M. Garmire, and Thomas C. Hasenberg, Journal of Nonlinear Optical Physics and Materials 14 (3), pp. 1-12 (2005).

“Design and Measurement of an MQW nipi Waveguide Modulator for Optoelectronic Integrated Circuits.” S. D. Koehler, E. M. Garmire, A. R. Kost, D. Yap, D. P. Docter, T. C. Hasenberg, IEEE J. of Quantum Electron. QE-32, pp. 1029-1037 (1996).

“Operating Characteristics of InGaAs/GaAs MQW Hetero-nipi Waveguide Modulators.” S. D. Koehler, E. M. Garmire, A. R. Kost, D. Yap, D. P. Docter, and T. C. Hasenberg, IEEE Photon. Technol. Lett. 7, pp. 878-880 (1995).

“Picosecond Optical Nonlinearities in a Strained InAs/GaAs Hetero n-i-p-i Structure.” D. S. McCallum, X. R. Huang, Martin D. Dawson, Thomas F. Boggess, Arthur S. Smirl, T. C. Hasenberg,

and Alan Kost, J. Appl. Phys. 71, pp. 929-932 (1992).

“Optical Nonlinearities and Ultrafast Charge Transport in All-Binary InAs/GaAs Strained Hetero n-i-p-i's.”  D. S. McCallum, X. R. Huang, Martin D. Dawson, Thomas F. Boggess, Arthur L. Smirl, T. C. Hasenberg, and Alan Kost, J. Appl. Phys. 70, pp. 6891-6897 (1991).

“Combined Local and Carrier Transport Optical Nonlinearities in a Hetero n-i-p-i Structure.” Alan Kost, Michael Jupina, Elsa Garmire, and T. C. Hasenberg, Appl. Phys. Lett. 58, pp. 1018-1020 (1991).

“Performance Characteristics of Hetero n-i-p-i Structures.” Alan Kost, Optical and Quantum Electronics 22, pp. S187-S200 (1990). (Invited Paper)

“Optical Nonlinearities in Semiconductors due to Carrier Transport in Semiconductors.” Elsa Garmire, N. M. Jokerst, A. Kost, A. Danner, and P. D. Dapkus, J. Opt. Soc. Am. B 6, pp. 579-587 (1989).

“Charge Transport Enhanced Optical Nonlinearities in Semiconductors.” Alan Kost, Elsa Garmire, and Tom Hasenberg, Nonlinear Optical Properties of Materials, proc. SPIE 1148, pp. 144-151 (1989). (Invited Paper)

“Carrier Lifetimes in a Hetero n-i-p-i Structure.” A. Kost, M. Kawase, E. Garmire, A. Danner, H. C. Lee, and P. D. Dapkus, Quantum Well and Superlattice Physics II, proc. SPIE 943, pp. 114-117 (1988).

“Large Optical Nonlinearities in a GaAs/AlGaAs Hetero n-i-p-i Structure.” A. Kost, E. Garmire, A. Danner, and P. D. Dapkus, Appl. Phys. Lett. 52, pp. 637-639 (1988).

The first report of light modulation with n-i-p-i material containing heterojunctions. This paper has been cited 60 times.

 “Nonlinear Absorption Coefficient of GaAs Doping Superlattices.” A. D. Danner, P. D. Dapkus, A. Kost, and E. Garmire, J. of Appl. Phys. 64, pp. 5206-5209 (1988).

OPTICAL CONTROL OF MICROWAVES

“Optical Control of Microwaves with Semiconductor n-i-p-i Structures.” Alan Kost, Linda West, T. C. Hasenberg, Jeffrey O. White, Appl. Phys. Lett. 63, pp. 3494-3496 (1993).

A demonstration  that n-i-p-i material can be used for an optically controlled microwave shutter.

 PHOTOREFRACTIVITY

“Band-Edge Photorefractive Effect in Semiconductors.”  Afshin Partovi, Alan Kost, Elsa M. Garmire, George C. Valley, and Marvin B. Klein, Appl. Phys. Lett. 56, pp. 1089-1091 (1990).

This paper demonstrates that the photorefractive effect in semiconductors (energy transfer between light beams) is enhanced for wavelengths near the absorption edge.  It was cited in the December, 1990 issue of Optics and Photonics as one of the key results in photorefractivity during the 1980s.

This paper has been cited 30 times.

ELECTRON TRANSPORT

These papers show that electrons can extract energy from an ultrasonic wave packet and then impart energy back to the lattice, creating a replica of the original sound pulse.  The second article shows that the effect can be used to construct a microwave phase shifter.

“Continuously Variable Signal Delays Using Ultrasound.” A. Kost and J. D. Gavenda,  IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control 33, pp. 679-680 (1986).

“Generation of Ultrasonic Replica Wave Packets.” A. Kost and J. D. Gavenda, Phys. Rev. B15 32, pp. 1887-1891 (1985).

ARTICLES IN CONFERENCE PROCEEDINGS

 “Materials for Mid-IR Semiconductor Lasers.” A. R. Kost, in Infrared Applications of Semiconductors II, Donald L. McDaniel Jr., M. Omar Manasreh, Richard H. Miles, Sivalingam Sivananthan, Eds., Proc. of the Materials Research Society, Vol. 484, pp. 3-10 (1998).

“InAs/GaAs Short-period Strained-layer Superlattice Modulators Grown Using Advanced Digital Reflection High-Energy Electron Diffraction Techniques.” T. C. Hasenberg, P. Chen, A. Madhukar, A. R. Kost, J. Visher, and A. Konkar, Proceedings of the 1994 International Molecular Beam Epitaxy Conference, Japan, J. Crystal Growth, 150, pp. 1368-1374 (1995).

“Organometallics for Optical Limiting Devices.” L. W. Tutt, S. McCahon, A. Kost, M. Klein, T. F. Boggess, G. R. Allan, S. R. Rychnovsky, D. R. Labergerie, and A. L. Smirl, in Proceedings of the First International Conference on Intelligent Materials, pp. 165-174 (Technomic Publishing Co. Inc., Lancaster, 1993). (Invited Paper)

“Hetero n-i-p-i Structures for Nonlinear Optics and for Studies of Charge Carrier Transport.” Alan Kost, Photo-Induced Space Charge Effects in Semiconductors: Electro-Optics, Photoconductivity and the Photorefractive Effect, D. D. Nolte, N. M. Haegel, and K. W. Goossen, Eds., Proc. of the Materials Research Society, Vol. 261, pp. 13-20 (1992). (Invited Paper).

“Fast State Filling Optical Nonlinearities with Charge Carrier Transport.” Jeff White, Alan Kost, Tom Hasenberg, George Valley, and Elsa Garmire, Quantum Optoelectronics 1991, Technical Digest Series, Vol. 7 (Optical Society of America, Washington D C 1991), pp. 222-225.

“Optical Switches with Combined Bragg Reflectors and Doping Superlattices.” A. Kost, E. Garmire, M. Kawase, A. Danner, H. C. Lee, and P. D. Dapkus, in Optical Bistability IV, W. Firth, N. Peyghambarian, and A. Tallet, Eds. (les Editions de Physique, Les Ulis Cedex, France, 1988) pp.  C2:201-C2:204.

Books Edited

Nonlinear Optics in Semiconductors, Series on Semiconductors and Semimetals, Vols. 58 and 59, Alan Kost and Elsa Garmire Editors (Academic Press, San Diego, 1999).

Book Chapter

“Resonant Optical Nonlinearities in Semiconductors.” Alan Kost, Chapter 1 in Nonlinear Optics in Semiconductors, Alan Kost and Elsa Garmire Editors (Academic Press, San Diego, 1999).

Special Report

“IFM/GPP/Optical Backplane: Optical Loss and Crosstalk Allocation,” report prepared for Rathyeon Company’s Electronic Systems Division (2000)

Patents

"Low-Voltage, Semiconductor Phase Modulator," Robert R. Hayes, Alan R. Kost, Daniel Yap, and Thomas R. Cooper, U. S. Patent Number 6,657,769, December 2, 2003.

"Integrated Optical Transmitter," G. C. Valley, K. R. Elliot, A. R. Kost, and D. Yap, U. S. Patent Number 6,466,349, October 15, 2002.

"Process for Making a Solid Optical Limiter Containing a Graded Distribution of Reverse Saturable Material," Thomas K. Dougherty, William E. Elias, Alan R. Kost, and Marvin B. Klein, U. S. Patent No. 5,391,329, Feb. 21, 1995.

“Method and Apparatus for Energy Transfers Between Optical Beams Using Near-Bandgap Electrorefractive Effect,” George C. Valley, Marvin B. Klein, Afshin Partovi, Alan Kost, and Elsa M. Garmire, U.S. Patent No. 5,130,849, July 14, 1992.