Colloquium: Yong-Hang Zhang

    Date: 
    Thursday, December 5, 2013 - 3:30pm - 5:00pm
    Location: 
    Meinel 307
    Description: 

    Ga-Free InAs/InAsSb type-II superlattice: its past, present and future

    Abstract(s): 

    This talk will review the past research on Ga-free InAs/InAsSb type-II superlattices, especially their growth, structural and electronic properties, and devices. Then it will focus on the recent processes in the MBE growth, the study of structural and optical properties, and device demonstration. The highlights of the talk will be the measured very long carrier lifetimes as well as the successful demonstration of InAs/InAsSb type-II superlattices nBn detectors with a record low dark current at 77 K for wavelengths beyond LWIR (8-12 µm) band.

    Speaker Bio(s): 

    Yong-Hang Zhang is the director of the Center for Nanophotonics and a professor of electrical engineering in the Ira A. Fulton Schools of Engineering at Arizona State University. Professor Zhang received his BS and MS in China and did his research at the Max Planck Institute for Solid States and received this doctoral degree in physics from the University of Stuttgart in 1991. He then worked as an Assistant Research Engineer at UCSB before he joined Hughes Research Labs in 1993. In 1996, he was appointed Associate Professor in the Department of Electrical Engineering at ASU and was then promoted to full professor in 2000. He is the founding director of the Center for Photonics Innovation at ASU and a fellow of OSA. His areas of research interest include MBE growth, optical properties of semiconductor heterostructures, optoelectronic devices (solar cells, IR detectors and lasers), and their applications. More information about his group can be found on the webpage: http://asumbe.eas.asu.edu/.